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Journal of Computational Electronics
ISSN：1569-8025

Journal of Computational Electronics

J COMPUT ELECTRON
学科领域：工程技术
是否预警：不在预警名单内
是否OA：否
录用周期：>12周，或约稿
新锐分区：工程技术3区
年发文量：111
影响因子：2.5
JCR分区：Q2

基本信息

《计算电子学杂志》汇集了现代电子学建模和仿真的各个方面的研究。这包括光学、电子、机械和量子力学方面，以及对底层数学算法和计算细节的研究。能量转换/储存以及分子和生物系统的相关领域也包括在内，其中重点是电荷传输、电子、机械和光学性质。光学和光电系统以及光子学;能量存储（例如电池、燃料电池）和收集（例如光伏），电路、超大规模集成电路布局、逻辑和架构的模拟（例如基于CMOS器件、量子元胞自动机、QBIT或单电子晶体管）;电磁模拟（如微波电子器件和组件）;或分子和生物系统。然而，在所有这些情况下，提交的手稿应明确阐述相关系统、材料或器械的电子特性和/或对物理模型、计算策略或数值算法提出新的贡献。
1569-8025SCIE/Scopus收录
2.5
点击查看最新影响趋势>
2.7
新
2026年3月发布
点击查看历史分区趋势    >
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
PHYSICS, APPLIED 物理：应用
3区
否
N/A
新
WOS期刊SCI分区  2024-2025最新升级版
按JIF指标学科分区收集子录JIF分区JIF排名百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q2
184/368
学科：PHYSICS, APPLIED
SCIE
Q3
101/187
按JCR指标学科分区收集子录JCR分区JCR排名百分位
学科：ENGINEERING, ELECTRICAL & ELECTRONIC
SCIE
Q3
193/368
学科：PHYSICS, APPLIED
SCIE
Q3
103/187
27
111
点击查看年发文量趋势图>
8%0>12周，或约稿-ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
4%
点击查看自引率趋势图>
时间预警情况
2026年03月发布的新锐学术版不在预警名单中
2025年03月发布的2025版不在预警名单中
2024年02月发布的2024版不在预警名单中
2023年01月发布的2023版不在预警名单中
2021年12月发布的2021版不在预警名单中
2020年12月发布的2020版不在预警名单中
97.30%7.05%-
CiteScore：5.30
SJR：0.333
SNIP：0.882
学科类别分区排名百分位
大类：Mathematics
小类：Modeling and Simulation
Q1
66 / 361
大类：Mathematics
小类：Electrical and Electronic Engineering
Q2
270 / 970
大类：Mathematics
小类：Atomic and Molecular Physics, and Optics
Q2
74 / 232
大类：Mathematics
小类：Electronic, Optical and Magnetic Materials
Q2
102 / 305

期刊高被引文献

Germanene nanotube electroresistive molecular device for detection of NO2 and SO2 gas molecules: a first-principles investigation
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1283-9
A dual-channel surface plasmon resonance biosensor based on a photonic crystal fiber for multianalyte sensing
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01305-7
Effect of temperature on the performance analysis of MLGNR interconnects
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-01297-W
First-principles analysis of the detection of amine vapors using an antimonene electroresistive molecular device
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01346-Y
Spin–orbit coupling effects on the electronic structure of two-dimensional silicon carbide
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01326-2
A computationally efficient hybrid approach based on artificial neural networks and the wavelet transform for quantum simulations of graphene nanoribbon FETs
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01350-2
Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-01294-Z
Ultracompact ultrafast-switching-speed all-optical 4\u2009×\u20092 encoder based on photonic crystal
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1278-6
An FPGA-based real quantum computer emulator
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1287-5
Bayesian inversion for nanowire field-effect sensors
来源期刊：Journal of Computational ElectronicsDOI：10.1007/s10825-019-01417-0
An analytical model for the surface potential and threshold voltage of a double-gate heterojunction tunnel FinFET
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1279-5
Analysis and design of a terahertz microstrip antenna based on a synthesized photonic bandgap substrate using BPSO
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01301-X
An alternative method for implementation of frequency-encoded logic gates using a terahertz optical asymmetric demultiplexer (TOAD)
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01393-5
Boosting the performance of an ultrascaled carbon nanotube junctionless tunnel field-effect transistor using an ungated region: NEGF simulation
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01385-5
Estimation of five parameters of photovoltaic modules using a synergetic control theory approach
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1253-2
Electron injection in anthocyanidin and betalain dyes for dye-sensitized solar cells: a DFT approach
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01331-5
Simulation of the influence of the gate dielectric on amorphous indium-gallium-zinc oxide thin-film transistor reliability
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01316-4
Theoretical study of optical absorption in nonpolar AlGaN/GaN step quantum well structures
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1263-0
Widely tunable electronic properties in graphene/two-dimensional silicon carbide van der Waals heterostructures
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01351-1
Design of a U-shaped circularly polarized wearable antenna with DGS on a fabric substrate for WLAN and C-band applications
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01342-2
Effect of the front-metal work function on the performance of a-Si:H(n+)/a-Si:H(i)/c-Si(p) heterojunction solar cells
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01324-4
Computational and experimental analysis of a low-profile, isolation-enhanced, band-notch UWB-MIMO antenna
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01309-3
IonMonger: a free and fast planar perovskite solar cell simulator with coupled ion vacancy and charge carrier dynamics
来源期刊：Journal of Computational ElectronicsDOI：10.1007/s10825-019-01396-2
Designing high-performance thermally stable repeaters for nano-interconnects
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1271-0
Reduction of the kink effect in a SELBOX tunnel FET and its RF/analog performance
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01382-8
Design of an add filter and a 2-channel optical demultiplexer with high-quality factor based on nano-ring resonator
来源期刊：Journal of Computational ElectronicsDOI：10.1007/s10825-019-01399-z
A novel 3D three/five-input majority-based full adder in nanomagnetic logic
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01304-8
A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01377-5
Numerical analysis of the effect of the cooling process on the characteristics of n-type semiconductor gas sensors
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1268-8
Improving the wave iterative method by metaheuristic algorithms
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01394-4
Time-dependent equivalent circuit modeling of ferromagnetic single electron transistors
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-01293-0
Heat transfer improvement study of electronic component surfaces using air jet impingement
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01387-3
Calculation of the resonant frequency of a rectangular dielectric resonator antenna using perturbation theory
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1284-8
Compact modeling of GIDL-assisted erase in 3-D NAND Flash strings
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01328-0
The design of a wideband single-layer dual-band reflectarray antenna based on an optimized element
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1264-Z
The effect of pressure on the electronic and optical properties of hydrogenated graphene: a first-principles study
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01347-X
Two-dimensional model for double-gate LDMOSFET devices
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01354-Y
The effects of a Stone–Wales defect on the performance of a graphene-nanoribbon-based Schottky diode
来源期刊：Journal of Computational ElectronicsDOI：10.1007/s10825-019-01361-z
A GaN RB-MISHEMT with a Schottky–MIS hybrid drain and An Al0−0.50Ga1−0.50N/GaN heterojunction
来源期刊：Journal of Computational ElectronicsDOI：10.1007/s10825-019-01363-x
Modelling resistive and phase-change memory with passive selector arrays: a MATLAB tool
来源期刊：Journal of Computational ElectronicsDOI：10.1007/s10825-020-01504-7
Simplification and modification of multiple controlled Toffoli circuits for testability
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01303-9
The maximum rectification ratio of pyrene-based molecular devices: a systematic study
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01307-5
Metamaterial synthesis using a CAD model based on an evolutionary technique to improve the performance of TCAS antennas
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01367-7
Different contributions to spin polarization in the Auger neutralization of He + ions at the Ni (111) surface under the influence of screening length
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01378-4
Theoretical study of the effect of polarization matching layers on the Shockley–Read–Hall recombination-induced dark current density in InGaN/GaN heterostructure solar cells
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01333-3
A full 3D model of the modulation efficiency of a submicron complementary metal–oxide–semiconductor (CMOS)-compatible interleaved-junction optical phase shifter
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01366-8
Rigorous computation of a compact square patch antenna with notches using the moment method
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1273-Y
Meshfree analysis of high-frequency field-effect transistors: distributed modeling approach
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-1262-1
Circular transmission resonances and magnetic field effects in a ring of quantum dots connected to external leads in the meta-configuration
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-018-01291-2
A fair comparison of the performance of charge plasma and electrostatic tunnel FETs for low-power high-frequency applications
来源期刊：Journal of Computational ElectronicsDOI：10.1007/S10825-019-01388-2

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新
2026年3月发布
大类学科小类学科Top期刊综述期刊
工程技术3区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
PHYSICS, APPLIED 物理：应用
3区
否
N/A
2025年3月升级版
大类学科小类学科Top期刊综述期刊
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
PHYSICS, APPLIED 物理：应用
4区
否
否
2023年12月旧的升级版
大类学科小类学科Top期刊综述期刊
工程技术4区
ENGINEERING, ELECTRICAL & ELECTRONIC 工程：电子与电气
4区
PHYSICS, APPLIED 物理：应用
4区
否
否